Publication | Closed Access
Theoretical Study of Structural and Vibrational Properties of (AlP)<i><sub>n</sub></i>, (AlAs)<i><sub>n</sub></i>, (GaP)<i><sub>n</sub></i>, (GaAs)<i><sub>n</sub></i>, (InP)<i><sub>n</sub></i>, and (InAs)<i><sub>n</sub></i> Clusters with <i>n</i> = 1, 2, 3
108
Citations
23
References
2002
Year
EngineeringVibrational PropertiesChemistryElectronic StructureSemiconductorsTheoretical StudyQuantum MaterialsIndium TrimersMaterials ScienceCluster SciencePhysicsCrystalline DefectsSeveral IsomersQuantum ChemistrySolid-state PhysicAb-initio MethodNatural SciencesApplied PhysicsCondensed Matter PhysicsCluster ChemistryCs SymmetryMain Group Chemistry
The structure, geometry, and vibrational frequencies of several isomers of small group III−V (MX)n clusters (n = 1, 2, 3; M = Al, Ga, In; X = P, As) have been investigated using density functional theory. The results reveal the same behavior as in the nitride clusters for monomers and dimers. The Al trimers exhibit a D3h structure like the nitride, but the gallium and indium trimers exhibit a three-dimensional structure of Cs symmetry. The existence of strong X−X bonds dominates both the structure and the vibrations of the Ga and In trimers.
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