Publication | Closed Access
High resolution and in situ investigation of defects in Bi-irradiated Si
93
Citations
9
References
1984
Year
Situ InvestigationHigh ResolutionEngineeringMicroscopySilicon On InsulatorDefect ToleranceBi-irradiated SiElectron MicroscopyIndividual Demage CascadesMaterials ScienceCluster SciencePhysicsDefect FormationSemiconductor Device FabricationMicrostructureSilicon DebuggingElectron BeamApplied PhysicsElectron Microscope
High resolution and in situ transmission electron microscopy (TEM) studies give complementary results for the structural characteristics of defect clusters. The former confirm the amorphous nature of defect. cluster cores formed directly in individual demage cascades. The size and the number of the clusters is determined. The longterm stability of these damaged zones is shown to depend on the energy of the electron beam used in the TEM observations.
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