A simple subcircuit extension of the BSIM3v3 model for CMOS RF design

Abstract

An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped resistors-the only added elements. The non-quasi-static and substrate effects can be modeled with these two resistors to significantly improve the model accuracy up to a frequency of 10 GHz, which is about 70% of the f/sub T/ of the 0.5 /spl mu/m NMOS transistor.