Concepedia

Growth and properties of CVD-SiC layers using tetramethylsilane

António Figueras, S. Garelik, José Santiso, R. Rodrı́guez-Clemente, B. Armas, R. Berjoan, J Saurel, R. Caplain

Materials Science and Engineering B · 1992 · 24 citations · 6 references

DOI

Concepts

References

6

A critical appraisal of growth mechanisms in MOVPE

G. B. Stringfellow · Journal of Crystal Growth · 1984 · 169 citations

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Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition

C.D. Stinespring, J. Wormhoudt · Journal of Crystal Growth · 1988 · 95 citations

, , +14

A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane

António Figueras, S. Garelik, R. Rodrı́guez-Clemente et al. · Journal of Crystal Growth · 1991 · 40 citations

, , +14

Growth kinetics of silicon carbide CVD

Tsutomu Kaneko, Takashi Okuno, Hisami Yumoto · Journal of Crystal Growth · 1988 · 24 citations

, , +14

Chemical vapour deposition of SiC and some of its properties

Seiji Motojima, Hideki Yagi, Noriyuki Iwamori · Journal of Materials Science Letters · 1986 · 19 citations

, , +12