Electrical switching and <i>in situ</i> Raman scattering studies on the set-reset processes in Ge–Te–Si glass

Abstract

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1mA current with a threshold electric field of 7.3kV∕cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge15Te83Si2 glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge15Te83Si2 glass can be set and reset easily.