Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers - Concepedia

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Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

22

Citations

13

References

1999

Year

Changsi Peng, Hongsong Chen, Zhen-Sheng Zhao, J.H. Li, D. Y. Dai, Q. Huang, J. M. Zhou, Yanhui Zhang, Ching‐Hsuan Tung, T. T. Sheng,

Journal of Crystal Growth

Materials ScienceMaterials EngineeringLow-temperature Si BuffersEngineeringSevere Plastic DeformationDislocation InteractionStrain RelaxationApplied PhysicsSemiconductor Device FabricationGesi AlloyMicroelectronicsSilicon On InsulatorMicrostructureHigh Strain Rate

References

	Year	Citations

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