Publication | Closed Access
Mirror‐Image Photoswitching of Individual Single‐Walled Carbon Nanotube Transistors Coated with Titanium Dioxide
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Citations
35
References
2009
Year
Photoactive Quantum DotsEngineeringOptoelectronic DevicesNanocomputingSemiconductor DeviceChemical EngineeringElectronic DevicesCarbon-based MaterialPhotodetectorsNanoelectronicsQuantum DotsMirror‐image PhotoswitchingCompound SemiconductorPhotonicsElectrical EngineeringTitanium DioxidePhysicsNanotechnologyQuantum DeviceTitle TransistorsNanomaterialsApplied PhysicsQuantum Photonic DeviceOptoelectronicsUv Irradiation
Dotting the i's: Stimuli-responsive optoelectronic devices are formed from the title transistors functionalized with photoactive quantum dots. The p-type semiconducting tubes show a fast current decrease under UV irradiation and reversibility when the UV irradiation is switched off. In contrast, ambipolar tubes show mirror-image photoswitching effects when negative and positive gate bias voltages are applied.
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