Applied Physics Letters · 1989 · 98 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsThin Film Optical PropertiesCarrier LifetimeCarrier Lifetime MeasurementEpitaxial Thin FilmsLifetimesMetalorganic Chemical Vapor DepositionMinority Carrier Lifetime MeasurementPhotoluminescenceRadiative Lifetimes
The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.
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