Switching field trends in pseudo spin valve nanoelement arrays

Abstract

Room temperature magnetic properties of arrays of NiFe 6 nm/Cu 3–6 nm Co 4 nm pseudospin valve elements with widths below 100 nm have been investigated as a function of the aspect ratio of the elements. The elements are made from sputtered film stacks patterned using interference lithography and ion milling. The separate magnetic switching of the Co and NiFe layers can be clearly distinguished. The magnetic layers interact through both exchange and magnetostatic coupling. As both the aspect ratio of the element and the Cu spacer thickness increase, the magnetostatic coupling becomes weaker and the magnetization of the layers becomes coupled parallel at remanence.