Applied Physics Letters · 2000 · 714 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsOxide SemiconductorsSemiconductor Device MaterialsCurrent InjectionCurrent-voltage RelationsDiode Current-voltage CharacteristicsExcimer LasersN-type Oxide SemiconductorsP-type Oxide SemiconductorsPotential - Current CharacteristicsZinc Oxides
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.
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Mechanisms behind green photoluminescence in ZnO phosphor powders
K. Vanheusden, W. L. Warren, C. H. Seager et al. · Journal of Applied Physics · 1996 · 3.7K citations
Natural Sciences, Materials Engineering, Materials Science +17
Electron Spin Resonance Studies of Donors and Acceptors in ZnO
Paul H. Kasai · Physical Review · 1963 · 321 citations