Insulation characteristics of 1100 kV GIS under very fast transient overvoltage and lightning impulse

Abstract

Very fast transient overvoltage (VFTO) in gas insulated switchgear (GIS) is of great concern at the higher rated voltages because the difference between the rated lightning impulse (LI) and the VFTO withstand voltage decreases. In order to clarify VFTO withstand level of 1100 kV GIS, a simulation system was designed for generation of VFTO. The breakdown characteristics of sphere-plane gap and rod-plane gap in SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> under VFTO and LI were investigated for different gas pressures. Experimental results show that the breakdown voltages in slightly inhomogeneous field gaps under VFTO are higher than that under LI. However, for the rod-plane gaps, the breakdown voltages and voltage-time curves under VFTO fall below that of LI at higher pressure in the case of negative polarity. The polarity effect of rod-plane gaps under LI is reversed at a certain pressure. Based on the analyses, it is concluded that the different breakdown characteristics of SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> gaps may be attribute to the difference between space charge behaviors during the discharge development under the impulse with different wave front and oscillation tail of VFTO and LI.