ZnGa[sub 2]O[sub 4]:Mn phosphors for Thin-Film Electroluminescent Displays Exhibiting Improved Brightness

Abstract

Thin films of films have been deposited by radio frequency magnetron sputtering in order to study the effects of annealing temperatures less than 1000°C on the thin-film electroluminescent properties. Energy-dispersive X-ray compositional analysis showed a loss of zinc during sputtering, with the film composition being All films showed strong (111) and (222) X-ray reflections relative to the power standard. As the annealing temperature was raised, the texture rotated toward that of the powder material. The as-deposited films showed no photoluminescence; however, once annealed at a single emission band at 504 nm was observed. Emission wavelength was independent of annealing temperature. The electroluminescent brightness of the devices peaked at an annealing temperature of 900°C. Peak brightness and efficiency were 350 and 0.55 lm/W at 60 Hz, and 1500 and 0.30 lm/W at 600 Hz. These high brightness values have been attributed to the roughness of the substrates. © 2001 The Electrochemical Society. All rights reserved.