Confinement Subbands in an InGaAs/GaAs Non-Square Quantum Well

Abstract

Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In 0.2 Ga 0.8 As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.