Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

TLDR

SiN‑on‑SOI platforms enable passive SiN functionalities to be combined with active SOI features, supporting low‑loss waveguides, crossings, and interlayer transitions via adiabatic tapers. We review multilayer SiN‑on‑SOI integrated photonic platforms operating near 1550 and 1310 nm, describing integration via front‑end or back‑end of line processes. The close coupling of silicon and SiN layers enables novel ultra‑broadband, efficient grating couplers and polarization‑management devices.

Abstract

We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers.