CdSe‐Sensitized p‐CuSCN/Nanowire n‐ZnO Heterojunctions

Abstract

A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core–shell nanowire array (see Figure). Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency.