Concepedia

Publication | Closed Access

Photoinduced Paramagnetic Defects on Silicon Surface

11

Citations

0

References

1974

Year

Abstract

Two photoinduced ESR absorption lines are observed at high resistivity silicon surfaces which are chemically etched and followed to rinse with water. It is found that these centers are associated with dissociative water adsorption on surface structural hydroxyl groups and become parama-gnetic by trapping photoexcited excess free carriers.