Publication | Closed Access
Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry
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Citations
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References
2005
Year
Materials ScienceGaas CrystalsEpitaxial GrowthEngineeringDislocation InteractionPhysicsCrystal Growth TechnologyApplied PhysicsDefect FormationGlobal Numeric SimulationDislocation Cells
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