Applied Physics Letters · 1978 · 43 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsIon ImplantationOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor DetectorsAnnealingAntireflection CoatingsAvalanche GainAvalanche PhotodiodesCurrent DensityDark CurrentIon Implantation EffectsPhotodiodes
High-quantum-efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10−6 A/cm2 at 10 V. The devices have 65% external quantum efficiency at 1.06 μm without an antireflection coating and a uniform avalanche gain of 12.
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GaInAsP/InP avalanche photodiodes
C. E. Hurwitz, J. J. Hsieh · Applied Physics Letters · 1978 · 109 citations