Observation of deep levels in cubic silicon carbide

Abstract

In this work, a deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority-carrier traps. One trap (SCE1) is located 0.34 eV from the conduction-band edge; the other trap (SCE2) is located 0.68 eV from the conduction-band edge. These two traps have concentrations of approximately 1×1015 cm−3. The DLTS spectrum as a function of the surface treatment of the SiC has been investigated. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high-temperature thermal oxidation.