Migration and Localization of Metal Atoms on Strained Graphene

Abstract

Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted $\ensuremath{\pi}$-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.