Optics Letters · 2003 · 105 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsFiber OpticsLaser Host MaterialsOptical Properties Of MaterialsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor LasersFiber LasersLaser Gain MaterialsNonlinear Optical EffectsOptical AbsorptionOptical GainOptical Gain In SemiconductorsOptical Gain MaterialsPhysical Properties
We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.
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