15-µm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

Abstract

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.