Grain-boundary self-diffusion in Au by Ar sputtering technique

Abstract

Grain-boundary self-diffusion measurements over the temperature range 367–444°C have been made in polycrystalline Au using Au195 radioactive tracer and rf backsputtering technique for serial sectioning. The diffusion parameters are Qb = 0.88 eV and δDb0 = 3.1 × 10−10 cm3/sec which are discussed in relation to the possible vacancy diffusion mechanism. Both the parameters may be qualitatively identified with the motional properties of vacancies. The activation energy for grain-boundary self-diffusion in Au is in close agreement with that for low-temperature electromigration in thin Au films reported in the literature.