Monolithically Integrated 8:1 SOA Gate Switch With Large Extinction Ratio and Wide Input Power Dynamic Range

Shinsuke Tanaka, Seok–Hwan Jeong, Susumu Yamazaki, Ayahito Uetake, Shuichi Tomabechi, Mitsuru Ekawa, Ken Morito

IEEE Journal of Quantum Electronics · 2009 · 62 citations · 8 references

Concepts

Abstract

A monolithic 8:1 SOA gate switch that integrates an 8-ch SOA gate array, an 8:1 optical coupler, and a 1-ch SOA gate was developed for use in a large scale optical packet switching system. A 250-mum-long compact field-flattened coupler (FFC) produces a very small channel-imbalance together with a compact total chip size of 3.0 times 1.0 mm. The device exhibited a large ON-state gain of >14.3 dB and a small total gain deviation of 3.0 dB. The optimized passive waveguide structure successfully suppressed the stray light, which resulted in a record-high ON-OFF extinction ratio of >70 dB. We used a thin tensile-strained multi-quantum well (MQW) active layer which can attain high-saturation output power, low noise, and polarization insensitivity for SOA gates. Due to the coexistence of a high saturation output power and a low noise figure, the device exhibited a very wide input power dynamic range of 20.5 dB for a 10-Gb/s NRZ signal.

References

8