IEEE Journal of Quantum Electronics · 2009 · 62 citations · 8 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesOptical Communication SystemsOptical SwitchingPhotonic Integrated CircuitsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresExtinction RatioIntegrated Optical SwitchesMonolithic ArchitectureNoise FigureOptical Packet SwitchingSaturated Output PowerStrained Quantum WellsStray Light Suppression
A monolithic 8:1 SOA gate switch that integrates an 8-ch SOA gate array, an 8:1 optical coupler, and a 1-ch SOA gate was developed for use in a large scale optical packet switching system. A 250-mum-long compact field-flattened coupler (FFC) produces a very small channel-imbalance together with a compact total chip size of 3.0 times 1.0 mm. The device exhibited a large ON-state gain of >14.3 dB and a small total gain deviation of 3.0 dB. The optimized passive waveguide structure successfully suppressed the stray light, which resulted in a record-high ON-OFF extinction ratio of >70 dB. We used a thin tensile-strained multi-quantum well (MQW) active layer which can attain high-saturation output power, low noise, and polarization insensitivity for SOA gates. Due to the coexistence of a high saturation output power and a low noise figure, the device exhibited a very wide input power dynamic range of 20.5 dB for a 10-Gb/s NRZ signal.
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Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch arrays
M. Gustavsson, B. Lagerström, L. Thylén et al. · Electronics Letters · 1992 · 134 citations
Viable opto-electronic HPC interconnect fabrics
Ronald Luijten, Cyriel Minkenberg, R. Hemenway et al. · 2005 · 40 citations
Engineering, Computer Engineering, High-performance Computing +17