Growth, processing, and optical properties of epitaxial Er_2O_3 on silicon

Abstract

Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er(3+) density 100 x greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er (2)O(3) epitaxially grown on silicon. A peak Er(3+) resonant absorption of 364 dB/cm at 1535 nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm.