High-efficiency non-resonant cavity light-emittingdiodes

Abstract

860 nm surface-textured thin-film GaAs light-emitting diodes have been fabricated with a novel design which includes a selectively oxidised AlGaAs layer for current confinement. The highest reported external quantum efficiencies for injection currents below 0.3 mA are obtained. Furthermore, 20% external quantum efficiency for diodes with a current aperture of 12 µm is reported.