Irreversibility field up to 42 T of GdBa₂Cu₃O_7-δthin films grown by PLD and its dependence on deposition parameters

Abstract

We investigated the irreversibility field of GdBa2Cu3O7 − δ thin films grown epitaxially by pulsed laser deposition on single crystalline LaAlO3(100) substrates in pulsed magnetic fields up to 42 T and at temperatures between 50 and 100 K. The critical temperature Tc reached values of 93.5 K with a ΔTc of 0.6 K and an inductively measured self-field critical current density Jc at 77 K of 3.7 MA cm − 2. The pulsed magnetic field measurements yield a strong dependence of Hirr on the deposition rate, but the film thickness has a small influence on the resistive transition in high magnetic fields. A maximum irreversibility field Hirr of 40.1 T was measured at a temperature of 50 K for a 300 nm thick film.