Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Abstract

Flash memories (USB portable drives) are close to their miniaturization limits. The ultimate evolution of such devices is believed to exploit different concepts such as electronic phase transitions. Here we show that an electric field can trigger fast resistive switching in the fragile Mott insulators AM4X8 (A= Ga, Ge ; M = V, Nb, Ta; X = S, Se). This new type of resistive switching could lead to a new class of resistive random access memory (RRAM) with fast writing/erasing times (down to 50 ns) and resistance ratios ΔR/R of the order of 25% at room temperature. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.