Applied Physics Letters · 2005 · 21 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSolid-state ChemistryTransport PhenomenaCrystal ChemistryCrystal GrowthCrystalline MaterialsCrystallographyThermal Properties Of MaterialsBand TransportElectrical Transport PropertiesElectronic TransportImpuritiesSublimation GrowthTime-of-flight SpectroscopyTransport In Crystalline Materials
The hole mobilities in a vapor-Bridgman-grown crystal and in sublimation-grown crystals of tetracene were measured along the c*-direction in a temperature range from 300to450K by the time-of-flight method. The mobility was found to increase as a function of temperature in the vapor-Bridgman-grown crystal, indicating that the transport was thermally activated. After reaching its maximum of about 1cm2∕Vs at 320K, the mobility in the sublimation-grown crystals decreased with temperature in accordance with band transport models. Gas chromatography measurements indicated that the difference in the electronic transport properties could be related to a higher concentration of chemical impurities in the vapor-Bridgman crystal.
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Organic single-crystal field-effect transistors
R. W. I. de Boer, M. E. Gershenson, Alberto F. Morpurgo et al. · physica status solidi (a) · 2004 · 561 citations · Full text