Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics

Abstract

We describe the growth characteristics of a type of II–VI/III–V heterostructure, (Cd,Mn)Se/InAs, which shows promise for application in spintronics. We used a variety of approaches for growing the heterostructure, and found that a high epilayer quality could be obtained by incorporation of a thin ZnTe buffer layer between the two materials.