Publication | Closed Access
Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices
14
Citations
9
References
1997
Year
EngineeringCubic Ce3+ SitesFilm DevicesAtomic EffectsCe3+ SitesIi-vi SemiconductorMolecular Beam EpitaxyEpitaxial GrowthThin Film ProcessingMaterials SciencePhysicsCrystalline DefectsSemiconductor MaterialCrystallographyMaterial AnalysisApplied PhysicsCondensed Matter PhysicsElectroluminescent EfficiencyThin FilmsCermetCe3+ Site
Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce3+ sites along with the formation of another type of Ce3+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce3+ sites with VSr shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered.
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