Rise and fall of defect induced ferromagnetism in SiC single crystals

Abstract

6H–SiC (silicon carbide) single crystals containing VSi–VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase in structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.