An Easy Derivation of the Hole Lifetime in an n-type Semiconductor with Acceptor Traps

Abstract

The recombination and generation processes for electrons and holes in an n-type semiconductor with acceptor traps are described when the concentrations of electrons and holes are much smaller than 1019 cm-3 at room temperature. With this assumption Boltzmann statistics and the mass-action laws apply. The relations between the constants of recombination, generation and the mass-action laws are described. These relations are used for the calculation of lifetime in the case of steady state injection. It is shown that instantaneous lifetime and steady state lifetime are different. Agreement with an equation by Shockley and Read is found.