Polycube optical memory: a 65 × 10^7 bit read–write and random access optical store

Abstract

A random access optical memory for write-read-write operation is proposed. The memory is designed on the basis of a nonvolatile magnetooptic photoconductor sandwich storage material (MOPS) that offers high optical sensitivity. The optical addressing part of the memory consists of an He-Ne laser, digital light deflection combined with passive beam splitting and simple optics. The addressing is organized in blocks of about 10(3) bits. First experimental results measured at a system model being developed in our laboratory are presented, as well as results of storage experiments at a magnetooptic photoconductor sandwich.