High-field dielectric properties and Raman spectroscopic investigation of the ferroelectric-to-relaxor crossover in BaSn<i>x</i>Ti1−<i>x</i>O3 ceramics

Abstract

BaSnxTi1−xO3 solid solutions with compositions in the range x = 0–0.20 were studied by combining analysis of the field-induced dielectric and ferroelectric properties with Raman spectroscopic investigations. By combining techniques, the detection of specific features related to the ferroelectric-to-relaxor crossover with increasing Sn content is possible. Detailed tunability analysis of the x = 0.05 composition indicated that multiple components contribute to the dc-field induced permittivity response; these components are active in different temperature and field ranges and could be assigned to a few polarization mechanisms. First order reversal curves (FORC) for the material clearly show a transition from ferroelectric-to-relaxor behavior with increasing x, confirming the conclusions from the Raman and dielectric studies. This was evidenced by the shift of the FORC distribution over coercivities toward zero field values. Raman measurements allow the identification of the separate phases with varying Sn content and temperature, indicating large regions of phase coexistence. The composition x = 0.20 is in a predominantly relaxor state. This is ascribed to a large range of phase coexistence and to the presence of polar nanoregions promoted by Sn substitution on the B site of the perovskite unit cell ABO3.