Publication | Closed Access
Differential Negative Resistance of <i>n</i>-Type Inversion Layer in Silicon MOS Field-Effect Transistor
22
Citations
3
References
1972
Year
Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceLow TemperaturesEngineeringPhysicsNanoelectronicsHigh MobilitySurface ScienceApplied PhysicsBias Temperature InstabilityMicroelectronicsVoltage-controlled Differential-negative-resistance EffectDifferential Negative Resistance
A new type of voltage-controlled differential-negative-resistance effect was observed in an n-type surface inversion layer of a silicon MOS field-effect transistor with a very high mobility of 104 cm2/V sec at low temperatures.
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