Synthesis of β-SiC Powder from Bamboo Leaf in a DC Extended Thermal Plasma Reactor

Abstract

Fine silicon carbide powder was synthesized from bamboo leaf in a DC thermal plasma reactor through a single step process. With an applying current of 300 amp and 50 V voltages, the optimum duration of conversion of silica rich bamboo leaf to silicon carbide is 20 minutes. X-ray diffraction (XRD) results reveal that the final product is identified as β-SiC having lattice parameter a = 4.295 Å, which is in close agreement with the reported value of 4.347 Å. The scanning electron microscope (SEM) micrograph clearly shows the formation of cubical particles of β-SiC. The micro-Raman and X-ray photoelectron spectroscopy (XPS) analysis also confirm the formation of β-SiC phase.