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Properties of SNS Josephson junctions fabricated by 200 keV oxygen implantation into YBa/sub 2/Cu/sub 3/O/sub 7-δ/
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Citations
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References
1999
Year
Superconducting MaterialEngineeringSemiconductor DeviceJosephson JunctionsImplantation MaskNanoelectronicsSuperconductivitySuperconducting DevicesSemiconductor TechnologySns Josephson JunctionsElectrical EngineeringJosephson CouplingHigh-tc SuperconductivityPhysicsYba/sub 2/Cu/subKev Oxygen ImplantationMicroelectronicsApplied PhysicsCondensed Matter Physics
The properties of SNS Josephson junctions in YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// thin films have been investigated, which were fabricated by oxygen irradiation at 200 keV through a 50 nm wide slit in an implantation mask. After annealing the irradiated microbridges at 500/spl deg/C in an oxygen atmosphere, the implanted region has a reduced but finite transition temperature, allowing Josephson coupling in a temperature window of <15 K. Close to the coupling temperature the critical current shows a nearly complete modulation in an applied magnetic field. This indicates a homogeneous current distribution in the junctions and therefore a homogeneous defect distribution throughout the implanted and subsequently annealed region of the superconducting microbridges. Over the entire temperature range of Josephson coupling, the junctions exhibit resistively shunted junction like I-V characteristics with additional excess current. Furthermore, the exponential dependence of the critical current on temperature is in good agreement with conventional superconductor-normal-superconductor proximity effect theory.
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