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Surface morphology changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy
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Citations
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References
1997
Year
SemiconductorsMaterials ScienceIi-vi SemiconductorEngineeringCrystalline DefectsSurface ScienceApplied PhysicsSurface Morphological ChangesSurface Morphology ChangesThin Film Process TechnologyThin FilmsMolecular Beam EpitaxyEpitaxial GrowthFilm StrainMicrostructureThin Film Processing
Surface morphological changes in ZnSe-related II–VI epitaxial films grown by molecular beam epitaxy have been investigated by atomic force microscopy and transmission electron microscopy. We found that under group-II-rich conditions with c(2×2) surface reconstruction, the process of roughening gives rise to periodic elongated corrugations aligned in the [11̄0] direction. Under group-VI-rich conditions with (2×1) surface reconstruction, rounded grains form instead of corrugated structures. The surface morphology is dependent on the VI/II ratio and growth temperature, but is independent of the film strain. The observed morphological changes are mainly due to growth kinetics and are not stress driven. We propose a model to explain the changes in surface morphology under group-II-rich conditions and group-VI-rich conditions.
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