Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

Abstract

We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, (Ga1−xMnx)As. The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and M–H characteristics of two (Ga1−xMnx)As samples having different Mn content x.