Electrical and optical evidence of resonant tunneling of holes in an <i>n</i>+<i>i</i> <i>n</i>+ double-barrier diode structure under illumination

Abstract

Using low-temperature photocurrent, steady-state and time-resolved photoluminescence, we have shown the importance of hole transport in the optical properties of n+in+ double-barrier diodes under operation. We have also seen evidence of resonant tunneling of minority holes in such an illuminated double-barrier diode.