InP-based 2.8–3.5 <i>μ</i>m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Abstract

We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The performance of two different active region designs, superlattice (“SL”) and “W”-shaped quantum wells (“W”), is compared. Although continuous wave operation up to 80 °C could be proven, a spontaneous emission droop similar to nitride-based LEDs has been observed and is discussed.