Publication | Closed Access
(Pb,Sr)TiO<sub>3</sub> Thin Films for a ULSI DRAM Capacitor Prepared by Liquid Source Misted Chemical Deposition
32
Citations
11
References
2001
Year
Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineeringUlsi Dram CapacitorEpitaxial GrowthOxide ElectronicsSurface ScienceApplied PhysicsPst Thin FilmHigh Dielectric ConstantThin Film Process TechnologyThin FilmsChemical DepositionMicroelectronicsChemical Vapor DepositionThin Film Processing
(Pb,Sr)TiO3 (PST) thin films have been successfully grown on Pt-coated Si(100) wafers by the liquid source misted chemical deposition method. The PST thin film has high crystallinity, a smooth surface, and uniform elemental composition. Electrical measurements revealed the PST thin film has a high dielectric constant, low dielectric loss, and good insulating properties. These results indicate that the PST thin film is a promising material for a ULSI DRAM capacitor and other microelectronic device applications.
| Year | Citations | |
|---|---|---|
Page 1
Page 1