Applied Physics Letters · 2008 · 75 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsPlasmonicsQuantum WellsSemiconductor HeterostructuresGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGreen Light-emitting DiodesPlasmonic GratingsQuantum Well HeterostructuresQuantum Well Light-emitting DiodesQuantum Well StructuresSurface Plasmons
The enhanced and partially polarized output of a green light-emitting diode (LED), in which its InGaN/GaN quantum well (QW) couples with surface plasmons (SPs) on a surface Ag grating structure, is demonstrated. Compared with a LED sample without (flat) Ag coating, the total output intensity of an LED of SP-QW coupling can be enhanced by ∼59% (∼200)% when the grating period and groove depth are 500 and 30 nm, respectively. Also, a bottom-emission polarization ratio of 1.7 can be obtained under the condition of 15 nm in groove depth.
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Surface-plasmon-enhanced light emitters based on InGaN quantum wells
Koichi Okamoto, Isamu Niki, Alexander Shvartser et al. · Nature Materials · 2004 · 1.5K citations