The metal-semiconductor interface: Si (111) and zincblende (110) junctions

Abstract

The metal-semiconductor interface is analysed by means of a simple method, which includes both the effects of virtual surface states and the many-electron interaction. This model is used to obtain the barrier height phi Bn for the junctions of Si (111) with Al and Na; the results are in good agreement with experimental data. The trend on going from covalent to increasingly ionic semiconductors is also studied for junctions of zincblende (110) compounds for different metals. The results do not show the transition from Barden-like to Schottky-like behaviour displayed by experimental data.