Thermomagnetie Properties of n‐Type and p‐Type HgTe

Abstract

Abstract The electric conductivity, Hall coefficient, thermoelectric power, longitudinal and transverse Nernst‐Ettingshausen effects are measured between 100 and 300 K on heavily doped n‐type and p‐type HgTe samples. The temperature coefficient of the band gap, d| E o |/d T = −5 × 10 −4 eV K −1 , is obtained by fitting the electronic effective‐mass data with a band model based upon the full Kane theory with higher‐band corrections. The phonon‐drag contribution to the thermoelectric power of p‐type samples is observed. The heavy‐hole effective mass m*/m 0 = 0.45 ± 0.04 and one of the deformation potential constants, a = (2.7 ± 0.3) eV, are determined.