32 dB Gain 28 nm Bulk CMOS W-Band LNA

Abstract

A high gain W-band low noise amplifier for radiometric applications in 28 nm bulk CMOS technology is presented. Pads, inductors, capacitors and coplanar waveguides have been custom designed. The parasitic effects of the transistor layout have been evaluated by means of electromagnetic simulations and calculations based on data reported in the design rule manual of the technology. The amplifier consists of six cascode stages with input, output and interstage conjugate matching for maximum power transfer. Measurement results show a peak gain of 32 dB and a noise figure of 5.3 dB at 91 GHz.