IEEE Transactions on Nuclear Science · 1989 · 46 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsRadiation DetectionSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyLow-noise Circuit DesignNoise In Electronic DevicesNoise In Semiconductor DevicesRadiation DetectorsComplementary Metal-oxide-semiconductor DetectorsDetector NoiseDetector Readout ElectronicsLow-noise AmplificationLow-noise AmplifiersLow-noise DesignLow-power Cmos DesignSemiconductor Radiation Detectors
The design of a low-power, low-noise CMOS (complementary metal oxide semiconductor) amplifier is described. The amplifier was designed using the folded cascode configuration and was implemented on a 3- mu m double polysilicon process. The amplifier is part of a 128-channel charge amplifier array chip for use in the readout of radiation detectors with many channels. Aspects of the amplifier design such as bandwidth, pulse response, and noise are discussed, and the effects of individual transistors are shown, thereby relating circuit performance to process parameters. Circuit and radiation test results are included. The results show that a noise level as low as 670 electrons has been achieved with a risetime of 240 ns and a power density of less than 0.45 mW per channel.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
3
Development of high density readout for silicon strip detectors
J.T.S. Walker, Sherwood Parker, B. Hyams et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1984 · 123 citations
Engineering, Electrical Engineering, Electronic Materials +13