Influence of defects on the luminescence of Ge/Si quantum dots

Abstract

The influence of proton irradiation and hydrogen passivation on the photoluminescence (PL) of MBE-grown Ge/Si quantum dots (QDs) has been studied. An enhanced resistance of the QDs against irradiation as compared to quantum wells and bulk silicon has been found. The temperature dependence of the PL has been studied. The passivation improves the thermal stability of the QD luminescence and the irradiation reduces it. Various carrier/exciton redistribution processes among the PL centres and the influence of defects on them have been observed.