Electron Mass Tunneling along the Growth Direction of (Al,Ga) As/GaAs Semiconductor Superlattices

Abstract

We have measured the effective mass of electrons tunneling through thin barriers in (Al, Ga) As/GaAs superlattices by performing cyclotron-resonance experiments with the magnetic field oriented perpendicular to the growth direction. The effective mass is shown to increase with the barrier height at a rate that is in rough agreement with a model that includes the change in band mass in the barrier.