Dangling-bond charge qubit on a silicon surface

Abstract

Two closely spaced dangling bonds positioned on a silicon surface and sharing\nan excess electron are revealed to be a strong candidate for a charge qubit.\nBased on our study of the coherent dynamics of this qubit, its extremely high\ntunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a\nsilicon-based system, thereby overcoming a critical obstacle of charge qubit\nquantum computing. We investigate possible configurations of dangling bond\nqubits for quantum computing devices. A first-order analysis of coherent\ndynamics of dangling bonds shows promise in this respect.\n